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PD-97324 RevA
Integrated Power Hybrid IC for Appliance Motor Drive Applications
Description
IRAM136-1060BS Series 10A, 600V
with Internal Shunt Resistor
International Rectifier's IRAM136-1060BS is a 10A, 600V Integrated Power Hybrid IC designed for advanced Appliance Motor Drives applications. Typical applications include energy efficient Washing Machine, Fans, Air Conditions and Refrigerator Compressor Drivers. This module offers an extremely compact, high performance AC motor-driver in an isolated package that simplifies design. Several built-in protection features such as over current, temperature monitoring, shoot through prevention and under voltage lockout makes this a very robust solution. The combination of highly efficient Trench IGBT technology and the industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and a fully isolated thermally enhanced package makes this a highly competitive solution. The compact Single in line (SIP05) package minimizes PCB space.
Features
x x x x x x x x x x x Internal Shunt Resistor and current feedback Integrated gate drivers and bootstrap diodes Temperature feedback Programmable over current protection pin High efficiency Trench IGBT technology Under-voltage lockout for all channels Matched propagation delay for all channels 3.3V/5V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power range 0.25~0.75kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
VCES / VRRM V+ Io @ TC=25C Io @ TC=100C Ipk Fp Pd VISO TJ (IGBT & Diode & IC) TC TSTG T IGBT/ FW Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Maximum Peak Phase Current (Note 2) Maximum PWM Carrier Frequency Maximum Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range Mounting torque Range (M3 screw) 600 450 10 5 13 20 25 2000 +150 -20 to +100 -40 to +125 0.8 to 1.0 Nm C kHz W VRMS A V
Note 1: Sinusoidal Modulation at V+=400V, TJ=150C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms, TC=25C, FPWM=16kHz.
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IRAM136-1060BS
Internal Electrical Schematic - IRAM136-1060BS
V+ (13)
Q1
D1
Q2
D2
Q3
D3
Q4
D4
Q5
D5
Q6
D6
V- (16)
R1
VB1 (9) U, VS1 (10) VB2 (5) V, VS2 (6) VB3 (1) W, VS3 (2)
D7
C1
R2
R3
C2
C3
R4
R5
R6
D8
D9 23 VS1 24 HO1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16
R13
25 VB1 1 VCC Driver IC
LO2 15
HIN1 (17) HIN2 (18) HIN3 (19) LIN1 (20) LIN2 (21) LIN3 (22) FLT/EN (23) I_FB (24) VCC ISD RCIN VTH (25) (27) (28) (29)
2 HIN1 3 HIN2 4 HIN3 LIN1 LIN2 LIN3 6 7 5 F ITRIP EN RCIN VSS 8 9 10 11 12
LO3 14
COM 13
R8 R10 R9 C7
R12 C4
C6
VSS (26)
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IRAM136-1060BS
Absolute Maximum Ratings (Continued)
Symbol PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, ITrip Min --VB1,2,3 - 25 -0.3 -0.3 Max 15.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions W V V V tP=100s, TC =100C ESR / ERJ series
VIN
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES VFM VBDFM RBR RBR/RBR IBUS_TRIP Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Current Protection Threshold (positive going) Min 600 ----------------------Typ --0.3 1.5 1.7 5 80 1.8 1.45 1.2 22 --9 7 Max ----1.7 --80 --2.35 ------5 ----% A Units Conditions V V/C V A V V VIN=0V, IC=250A VIN=0V, IC=250A (25C - 150C) IC=5A, TJ=25C IC=5A, TJ=150C VIN=0V, V+=600V VIN=0V, V+=600V, TJ=150C IF=5A IF=5A, TJ=150C IF=1A TJ=25C TJ=25C ISD=Vss. See fig. 2 and fig. 11b ISD=Open. See fig. 2 and fig. 11b
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IRAM136-1060BS
Inverter Section Switching Characteristics @ TJ= 25C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Min ----------------------Typ 240 65 305 15 115 330 105 435 40 150 19 Max 400 90 490 25 ------------29 ns nC See CT1 IC=8A, V+=400V, VGE=15V TJ=150C, IC=5A, VP=600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE V+= 450V, VCC=+15V to 0V TJ=25C, VP=600V, SCSOA Short Circuit Safe Operating Area 5 ----s V+= 360V, VCC=+15V to 0V See CT2 See CT3 J ns See CT1 IC=5A, V+=400V VCC=15V, L=1.2mH, TJ=150C Energy losses include "tail" and diode reverse recovery J Units Conditions IC=5A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery
ICSC
Short Circuit Collector Current
---
50
---
A
TJ=25C, V+= 400V, VCC=15V See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol VB1,2,3 VS1,2,3 VCC VITRIP VIN HIN Deadtime Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage ITRIP input voltage Logic input voltage LIN, HIN High side PWM pulse width External dead time between HIN and LIN Min VS+12 Note 4 12 VSS VSS 1 1 Typ VS+15 --15 --------Max VS+20 450 20 VSS+5 VSS+5 ----V V s s Units V
Note 3: For more details, see IR21364 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)
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IRAM136-1060BS
Static Electrical Characteristics Driver Function @ TJ= 25C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol VIN,th+ VIN,thVCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH IQBS IQCC ILK IIN+ IINITRIP+ ITRIPV(ITRIP) V(ITrip, HYS) Definition Positive going input threshold Negative going input threshold VCC and VBS supply undervoltage, Positive going threshold VCC and VBS supply undervoltage, Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Quiescent VBS supply current Quiescent VCC supply current Offset Supply Leakage Current Input bias current VIN=3.3V Input bias current VIN=0V ITRIP bias current VT/ITRIP=3.3V ITRIP bias current VT/ITRIP=0V ITRIP threshold Voltage ITRIP Input Hysteresis Min 2.5 --10.6 10.4 -----------1 ---1 0.44 --Typ ----11.1 10.9 0.2 ------100 -3.3 --0.49 0.07 Max --0.8 11.6 11.4 --120 4 50 195 --6 --0.54 --Units V V V V V A mA A A A A A V V
Dynamic Electrical Characteristics @ TJ= 25C
Driver only timing unless otherwise specified. Symbol TON TOFF TFLT TBLT-ITRIP DT MT TITRIP TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input Filter Time (HIN, LIN) ITRIP Blanking Time Dead Time Matching Propagation Delay Time (On & Off) all channels ITRIP to six switch turn-off propagation delay (see fig. 2) FAULT clear time (see fig. 2) Min ----100 100 220 ------Typ ----200 150 290 40 --32.0 Max 1.15 1.15 ----360 75 1.75 --Units Conditions s IC=5A, V+=300V s ns ns ns ns s ms VIN=0 or VIN=5V VIN=0 or VIN=5V, VITRIP=5V VIN=0 or VIN=5V External dead time> 400ns IC=5A, V+=300V TC = 25C
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IRAM136-1060BS
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD CTI Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance, from pins to backside of module Comparative Tracking Index Min ------3.2 600 Typ 4.6 6.9 0.1 ----Max 5.0 7.6 ------Units Conditions Inverter Operating Condition Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm See outline Drawings
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 --Typ 100 2.52 4250 --1 Max 103 2.80 4335 125 --Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Internal Current Sensing Resistor - Shunt Characteristics
Symbol RShunt TCoeff PShunt TRange Parameter Resistance Temperature Coefficient Power Dissipation Temperature Range Min 72.5 0 ---40 Typ 73.3 ------Max 74.1 200 2.2 125 Units Conditions m ppm/C TC = 25C
W
C
-40C< TC <100C
Input-Output Logic Level Table
FLT/EN 1 1 1 1 1 0
ITRIP 0 0 0 0 1 X
HIN1,2,3 1 0 0 1 X X
LIN1,2,3 0 1 0 1 X X
U,V,W V+ 0 Off Off Off Off
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IRAM136-1060BS
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
T ITRIP
Figure 2. ITRIP Timing Waveform
T FLT-CLR
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAM136-1060BS
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Name VB3 W,VS3 na na VB2 V,VS2 na na VB1 U,VS1 na na V
+
Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none none Positive Bus Input Voltage none none Negative Bus Input Voltage Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Fault Output and Enable Pins Current Feedback Output Pin +15V Main Supply Negative Main Supply Current Protection Level Programming Pin RCIN Reset Programming Pin Temperature Feedback
na na VHIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FLT/EN IFB VCC VSS ISD RCIN VTH
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IRAM136-1060BS
Typical Application Connection IRAM136-1060BS
Application Notes
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Mounting an additional high frequency ceramic capacitor close to the module pins is highly recommended. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency and modulation techniques. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (See maximum ratings Table on page 3). 4. WARNING! Please note that after approx. 32ms the FAULT is automatically reset. (See Dynamic Characteristics Table on page 5). The default Fault clear time is when RCIN pin is open. Refer to Figure 11a for Re selection and desired RCIN setting. 5. PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. ISD can be programmed by using external resistor (Rext) connected to Vss. The default current level is when ISD pin is open (see Inverter Characteristics Table on page 3). Maximum current level can be achieved by connecting ISD to Vss. See Figure 11b for desired current level and resistor selection. 7. Fault/En pin (23) must be pulled-up to +5V.
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IRAM136-1060BS
12 Maximum Output Phase RMS Current - A 11 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz TC = 80C TC = 90C TC = 100C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
6 Maximum Output Phase RMS Current - A 5 4 3 2 1 0 1 10 Modulation Frequency - Hz 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=150C, TC=100C, MI=0.8, PF=0.6
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IRAM136-1060BS
100 80 Total Power Loss- W
60
40
20
0 0 2 4 6 8 10 12 14 16 PWM Sw itching Frequency - kHz
IOUT = 6A IOUT = 5A IOUT = 4A 18 20
Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
120
100 Total Power Loss - W 80
60 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz
40 20
0 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=100Hz
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IRAM136-1060BS
160 Max Allowable Case Temperature - C 140 120
100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
80 60
40 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150C, MI=0.8, PF=0.6, fmod=50Hz
160 TJ avg = 1.2 x TTherm + 17 IGBT Junction Temperature - C 150 140 130 120 110 100 111 90 65 70 75 80 85 90 95 100 105 110 115 Internal Therm istor Tem perature Equivalent Read Out - C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
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IRAM136-1060BS
5.0 4.5 Thermistor Pin Read-Out Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -30 -20 -10 Max Avg. Min
0
10
20 30 40 50 60 70 80 Therm istor Tem perature - C
90 100 110 120 130
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table.
11.0 Recommended Bootstrap Capacitor - F 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 5 10 PWM Frequency - kHz 15 20 4.7 F 3.3 F 2.2 F 1.5 F 6.8 F 10 F
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM136-1060BS
24 20 16 12 8 4 0 1 2 3 4 5 6 7 External Pull Up Resistor Selection - M 8 9 10 Typical Fault Clear Time - ms
Figure 11a. External Pull Up resistor selection for Fault clear time (Recommended minimum Pull up Resistor is 1M )
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 ISD Program m able Pull-Dow n Resistor - k
Typical ITRIP Threshold - A
Figure 11b. Itrip Level External Pull down Resistor Selection
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IRAM136-1060BS
Figure 12. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on delay time.
Figure 11b. Input to Output propagation turn-off delay time.
Figure 11c. Diode Reverse Recovery.
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IRAM136-1060BS
V+
Hin1,2,3
IC Driver
Ho
IN
U,V,W
IO
Lin1,2,3
Lo
Figure CT1. Switching Loss Circuit
V+
Hin1,2,3
IC Driver
Ho
IN
U,V,W
Lin1,2,3
IO
Lo
Io
Figure CT2. S.C.SOA Circuit
V+
Hin1,2,3
IC Driver
Ho
IN
U,V,W
Lin1,2,3
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
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IRAM136-1060BS
Package Outline IRAM136-1060BS
missing pin : 3,4,7,8,11,12,14,15
note3 note5
IRAM136-1060BS P
note4 note2
note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.
Dimensions in mm For mounting instruction see AN-1049
Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2008-05-23
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